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HMC594LC3B v00.0307 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC594LC3B is ideal for: * Fixed Microwave * Point-to-Multi-Point Radios * Test & Measurement Equipment * Radar & Sensors * Military & Space Features Gain Flatness: 0.2 dB Noise Figure: 3 dB Gain: 10 dB Output IP3: +36 dBm DC Supply: +6V @ 100 mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package Functional Diagram General Description The HMC594LC3B is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC594LC3B features extremely flat performance characteristics including 10 dB of small signal gain, 3.0 dB of noise figure and output IP3 of +36 dBm across the operating band. This high linearity LNA is ideal for test & measurement equipment and military assemblies due to its compact size, consistent output power and DC blocked RF I/O's. The HMC594LC3B is also available in chip form as the HMC594. Electrical Specifications, TA = +25 C, Vdd = +6V, Idd = 100mA* Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical. 18 7 Min. Typ. 2-4 10 0.015 3 15 17 21 22 36 100 130 4 Max. Units GHz dB dB/ C dB dB dB dBm dBm dBm mA 5 - 614 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594LC3B v00.0307 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss 15 10 5 RESPONSE (dB) Gain vs. Temperature 12 11 10 5 AMPLIFIERS - SMT 5 - 615 0 -5 -10 -15 GAIN (dB) S21 S11 S22 9 8 7 +25C +85C -40C -20 -25 -30 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 6 5 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) P1dB vs. Temperature 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594LC3B v00.0307 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 AMPLIFIERS - SMT Power Compression @ 3 GHz 25 Pout (dBm), GAIN (dB), PAE (%) Output IP3 vs. Temperature 40 38 20 Pout Gain PAE 36 34 OIP3 (dBm) 32 30 28 26 +25C +85C -40C 15 10 5 24 22 0 -10 -8 20 -6 -4 -2 0 2 4 6 8 10 12 14 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) +25C +85C -40C -10 -15 -20 -25 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C Gain, Power & OIP3 vs. Supply Voltage @ 3 GHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 35 30 25 20 15 10 5 5.5 Gain P1dB Psat OIP3 6 Vdd Supply Voltage (Vdc) 6.5 5 - 616 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594LC3B v00.0307 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +6.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 10 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7 Vdc +15 dBm 150 C 0.65 W 100 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Vdd Vdd (V) +5.5 +6.0 +6.5 Idd (mA) 97 100 103 5 AMPLIFIERS - SMT 5 - 617 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594LC3B v00.0307 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 3, 7, 9 Function GND Description Package bottom must also be connected to RF/DC ground This pin is AC coupled and matched to 50 Ohms from 2 - 4 GHz. This pin may be connected to RF/DC ground. Performance will not be affected. Interface Schematic 2 RFIN 4, 6 10, 12 N/C 5 Vgg Gate supply voltage for the amplifier. Adjust to achieve Idd= 100mA. External bypass capacitors are required. 8 RFOUT This pin is AC coupled and matched to 50 Ohms from 2 - 4 GHz. 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are required. Application Circuit Component C1, C4 C2, C5 C3, C6 Value 100 pF 1,000 pF 2.2 F 5 - 618 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594LC3B v00.0307 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 109712 Item J1 - J2 J3 - J6 C1 - C2 C3 - C4 C5 - C6 U1 PCB [2] Description SRI SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum HMC594LC3B Amplifier 109710 Evaluation PCB, 10 mils [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 619 |
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